Strain-Induced Effects in Advanced MOSFETs
by Viktor Sverdlov
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Opis książki
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Szczegóły książki
Autor
Viktor Sverdlov
Wydawnictwo
Springer Wien
Rok wydania
2011
ISBN
9783709103821
Dostępne formaty
eBook (PDF, EPUB)
Audiobook (MP3)
Język
Polski